Owing to an increase in growth rate the present work was able to grew thick Ga ( 1-x) Alx As layers at the temperature which is 135-210 ℃ lower than that used for the similar work.

  • 由于生长速率提高,本工作得以在比较低的温度下生长厚Ga(1-x)Al xAS层,与其他人的同类工作相比,生长温度低135&210℃。

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