Compared with the traditional planar MOSFET's, MOSFET's with novel structures have better performance, such as improved SCE, ideal DIBL and sub-threshold slope, as well as higher driving ability.

  • 和传统平面结构MOSFET相比,新结构MOSFET具有更好的性能(如改善的沟道效应(SCE),理想的漏诱生势垒降低效应(DIBL)和亚阈值特性)和更大的驱动电流等。

  • 互联网摘选 2025-01-20 17:17:32

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