Aiming at two main problems of SOI device the low vertical breakdown voltage and self-heating effect a novel SOI high-voltage power device with a variable-k dielectric layer ( VkD) is proposed.

  • 针对常规SOI器件纵向耐压低和自热效应两个主要问题,提出了变k介质埋层SOI(variablekdielectricburiedlayerSOI,VkDSOI)高压功率器件新结构。

  • 互联网摘选 2025-01-20 17:34:40

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