The temperature dependence of resistance presents a smooth metal-insulator transition far below the magnetic transition, and the MR monotonically increases with decreasing temperature under 8 kOe field, both of which are related to the structural defects in the films including grain boundaries and porosity.

  • 薄膜的电阻-温度关系具有平缓的金属-绝缘体转变,转变温度远低于其居里温度;在8kOe磁场下,薄膜的磁电阻随温度下降而单调上升。

  • 互联网摘选 2025-01-20 17:45:26

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