Results show that SiN films with a low hydrogen content can be prepared by HWP CVD at a higher rate and lower substrate temperature, and the main bond mode in the deposited SiN films is Si& N stretching mode.

  • 结果表明,采用HWP CVD技术能在低衬底温度条件下以较高的沉积速率制备低H含量的SiN薄膜,所沉积的薄膜主要表现为Si&N键合结构。

  • 互联网摘选 2025-01-20 19:13:03

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