One method is to use the stacked high k blocking layer, which could combines advantages of different high k materials.

The details are presented below: 1. The electrical property of Hf-based high k materials.

具体如下：1.Hf基高k材料的电学性质。

Meanwhile, the high k blocking layer along with the high work function metal electrode can effectively suppress the erase saturation.

同时，高k阻挡层和大功函数的金属电极一起能够有效的抑制擦除饱和现象。

In chapter 5, we attempt to grow high K material on Ge ( 001) substrate.

在第五章中我们尝试在Ge（001）衬底上生长高K薄膜。

ADM significantly reduced the increase in [ Ca2+] I induced by high K+.

ADM可显著抑制高钾引起的[Ca2+]i增加。

Low SiO2 and high K, strongly enriched in LIL;

低SiO2高K，LIL高度富集端元；

Connexin 43 expression in cultured astrocytes exposed to high K~ (+) concentration and/ or glutamate

高钾和（或）谷氨酸对培养的星形胶质细胞Connexin43表达的影响

Effect of SINI TANG on contraction of aortic rings induced by high K~+ and phenylephrine

四逆汤对高钾和去氧肾上腺素收缩主动脉环效应的影响

Low N+ high K treatment gave best yield, quality and commodity rate of tuber among treatments.

处理中，以低氮高钾（N4K6）处理的块茎产量、品质与商品率最佳。

Fabrication of a RF MEMS Switch Using High k Materials as Dielectric Layer

高介电常数介质RF MEMS开关的制作研究

Preparation and Structure of HfSi_xO_y Thin Film for High K Gate Dielectrics

高K栅介质HfSi xO y薄膜的制备工艺与结构分析

The propranolol inhibited the contraction of high K+-depolarized rabbit portal vein rings.

Pro显著抑制高K+去极化所致门静脉环的收缩作用。

The test principal, the significance and its practical application of the high K ratio method are all presented.

介绍了高K比法的试验原理、试验方法、工程应用和意义。

Extraction of Equivalent Oxide Thickness for HfO_2 High k Gate Dielectrics

HfO2高k栅介质等效氧化层厚度的提取

High k Gate Dielectric Materials and Si Nanotransistor ( Continued)

高k栅极电介质材料与Si纳米晶体管（续）

The high K+ solution could inhibit the Ach-induced hyperpolarization.

高钾则可取消Ach的内皮依赖性超极化。

The study on fabrication process of a high k capacitive MEMS switch is presented.

介绍了一种电容式MEMS开关的制作工艺。

These rocks are evaporite-related, and characterized by high K, Na, B and Mg.

这些岩石的出现与蒸发岩有关，其突出特征是富含K、Na、B、Mg等组分。

And the simulation results are very important, for they could provide systematic guidance for applications of high K gate dielectrics into devices.

模拟结果将为高K介质材料的应用提供参考。

High k Gate Dielectric ZrO_2 Thin Films on SOI Substrate with Ultra-Thin Top Silicon

超薄顶层硅SOI衬底上高k栅介质ZrO2的性能

At present, the high k/ metal gate has already become the research focus.

目前，高k/金属栅结构已经成为世界上一些知名半导体公司的研究焦点。