The diamond nucleation and growth on Si substrate by hot filament chemical vapor deposition ( HFCVD) at the low temperature (~ 550 ℃) and low pressure (~ 7 Torr) were studied.

  • 用热丝化学气相沉积方法研究了低温(~550℃)和低反应气压(~7Torr)下硅片上金刚石膜的成核和生长。

  • 互联网 2025-03-09 10:27:30

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