Cross-sectional TEM reveals that the threading dislocation ( TD ) density in the ELO-GaN region is significantly reduced.

  • 透射电子显微镜 ( TEM ) 的研究结果表明,横向外延区域GaN的位错密度明显减小.

  • 互联网摘选 2025-01-18 13:53:53

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