An optical study of relation between forbidden band gap and stress in silicon crystals

Character and widness of forbidden band of one-dimensional photonic crystal

一维光子晶体禁带的特点及增宽

Main factors for affecting complete forbidden band of 2-D air cylindrical photonic crystal

影响二维空气圆柱型光子晶体完全禁带的主要因素研究

When improving the laser intensity, forbidden band towards lower frequency.

当激光强度提高时，禁带向低频方向移动。

The thesis begins with the structure features and mainly discusses the optical characteristics of photonic forbidden band and defect mode in finite-period ID photonic crystals.

本论文从一维光子晶体的结构特点出发，着重研究了有限周期一维光子晶体的光子禁带及缺陷模的光学特性。

Effect of Medium Absorption on the One-dimensional Photonic Crystal Forbidden Band

介质吸收对一维声子晶体禁带的影响

However, width of forbidden band, bandwidth and quality factor Q of impurity mode vary with the increase of incidence angles evidently.

但是，禁带宽度、杂质模的带宽及Q值随着入射角的增加有明显变化。

It has been demonstrated that the obtained square grid structure shows the typical behavior as the photon crystal with its forbidden band near 6 μ m.

光学测试表明，制作的正方格子结构具有光子晶体行为，其光学禁带位于6μm附近。

The optical absorption and the width of forbidden band of diamond like thin films

类金刚石薄膜的光吸收及其禁带宽度的研究

The crystallite size and forbidden band extent of the FeS_2 films slightly decrease with the increasing sulfurizing pressure.

随硫化压力增大，FeS2薄膜的晶粒尺寸和禁带宽度略有减小。

As a new kind of man-made structure function material, photonic crystals could realize thermal infrared camouflage because of its high-reflection photon forbidden band.

光子晶体作为一种新型人工结构功能材料，基于光子禁带的高反射特性可以实现热红外伪装。

Passive Electromagnetic Shielding by Using Characteristics of Forbidden Band of Photonic Crystals

利用光子晶体的禁带特性实现无源电磁屏蔽

Investigation into forbidden band characteristic of1-D laser holographic photonic crystal with eigen matrix;

利用特征矩阵理论，建立关于缺陷对称的一维光子晶体的缺陷模型。

The transmission peaks and forbidden band gaps increase with increase of the structure arrays.

随着结构阵列的增加，透射峰与禁带都有加强的趋势。

For the same dielectric constant ratio, hexagonal structure lattice can obtain a wider complete forbidden band;

对于相同介电常数比，六边形晶格可获得较宽的完全禁带；

Low Temperature Photoluminescence Study on Broad Forbidden Band Semiconductor Material as well as Nanometer Material

宽禁带半导体材料及纳米材料的低温光致发光研究

Photonic forbidden band in volume holograms

体积全息图中的光子禁带

Simulated calculation and analysis of the forbidden band for fabricating two-and three-dimensional photonic crystal structures using holographic lithography

激光全息法制作二、三维光子晶体的模拟计算及禁带分析

The Forbidden Band Gap of Time-varying Magnetized Plasma Photonic Crystals

时变磁化等离子体光子晶体的禁带特性

The characteristics of photonic forbidden band and impurity mode in doped one-dimensional photonic crystal were investigated by numeral simulated calculation with the method of characteristic matrix.

运用光在分层介质中传播的特征矩阵方法，通过数值计算，研究了掺杂一维光子晶体中光子禁带及杂质模的特性随不同偏振光及入射角的变化。

The forbidden band width Eg of QW LD active layer materials.

激光器有源区材料的禁带宽度Eg。