By using this method we measured absolute 31P concentration in five NTD silicon samples. The results were compared with concentration of electrically active P from Hall effect measurement following 850 ℃, 1h anneals in the same samples.

  • 使用该方法测量了五种NTD硅样品的~(31)P浓度经850℃,1h退火后,用Hall效应方法测得的电活性磷浓度作了比较。

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