We also find that SiN_x, used as the gate-insulator-layer of the bottom gate TFT, can increase ( by about 20%) the crystalline volume factor ( Xc) of μ c-Si thin film deposited thereon.

  • 同时又发现,以sin x为栅绝缘层的底栅TFT,对随后生长的硅基薄膜有促进晶化的作用(约20%)。

  • 互联网摘选 2025-01-20 00:06:43

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