Growth rate of plasma enhancing with substrate biasing gets slow when current of radio frequency discharge increases.

  • 与等离子体促进增强法相比,偏压等离子体增强法的生长速率也有所变慢,并且随着偏压射频电流的增大,其生长速率越来越慢;

  • 互联网摘选 2025-01-20 11:54:29

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