The Ohmic contact and photoresponse of a ZnO single crystal film produced by MOCVD are investigated. The electrical and photoresponsive changes in the ZnO film due to the RF sputter deposition of SiO_2 ( antireflective coating) are also discussed.
对采用MOCVD方法沉积的ZnO单晶薄膜的欧姆接触特性、光电特性进行了研究,并对比研究了射频溅射沉积SiO2抗反射膜对ZnO薄膜I-V、光电特性的影响。
More attentions are paid to high Z materials because of their high melting point and low sputter rate, but such materials remain the problems of brittleness to which is harmful for their application.
高Z材料因其高熔点和低溅射率近年来受到越来越多的关注,但是难熔材料的脆性等问题仍然是这类材料应用的一大障碍。
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