lno

A new fast recover diode structure, the minority-carrier life time lateral non-uniform distribution ( MLD ) structure, is proposed.

提出了一种快恢复二极管新结构:少数载流子寿命横向非均匀分布 ( minority -carrierlifetim elateralnon - u-niform distribution, MLD ) 结构.

The electric property and structure of LNO film by different processes were studied, and the possible reasons for explaining these phenomena were presented.

系统研究了退火温度、退火时间、厚度等工艺条件对LNO薄膜电学特性和结构的影响，并进一步分析了产生这些现象的原因。

A type of index called a local non prefixed index is very useful for historical databases.

有一种索引被称为本地非前缀分区索引(localnonprefixedindex)非常适合用于存取历史数据.

Our results showed that the LNO thin films could be used as bottom electrodes for integrated ferroelectric thin film devices.

结果表明，制得的LNO薄膜可用作集成铁电薄膜器件的底电极。

This can be explained by considering lattice mismatch and thermal stress between LNO thin films and Si substrates.

退火温度导致的薄膜不同择优取向可以用晶格失配关系和热应力来解释；

The three-hour show featured some of the biggest names of British pop from decades past, including the Spice Girls, George Michael and Elbow.

这段长达3小时的表演秀集中了英国过去几十年来最优秀的流行音乐歌手，包括辣妹组合、乔治·迈克尔和五人乐队Elnow。

Electric and infrared absorption properties of LNO thin films prepared by RF-magnetron sputtering

LNO薄膜的射频磁控溅射制备及其电学性能与红外吸收性能