The distribution of Zn in the samples was observed. The effects of excess Zn and doping atom In on thermoelectric properties of β-Zn_4Sb_3 compound were investigated systematically.

By doping donor element in the film, P-type semiconductor film will be achieved, and this is quite essential for the development of semiconductor materials with P-N junction.

而通过在薄膜中掺杂受主元素，可以获得P型半导体薄膜，从而对于发展具有P-N结结构的半导体材料有重大帮助。

The reason of the room-temperature resistivity decreasing distinctly is part of doping Cl element substituting O-site as donor dopant.

室温电阻率大幅降低的原因，是引入的Cl元素有一部分能进入晶格取代O位起施主作用。

Effect of Doping K Element on Properties of Lithium Zirconate as CO_2-absorbent

K元素的掺杂对锆酸锂材料吸收CO2性能的影响

The effects were reviewed by changing the doping element, doping consent and calcination temperature. Characterizations of micro-structure and UV-vis absorption of modified-TiO2 photocatalyst were analysed using XRD, SEM, UV-vis.

通过改变掺杂元素、掺杂量和焙烧温度等考察对TiO2光催性的影响，同时利用XRD、SEM、UV-Vis等分析手段，表征了改性TiO2光催化剂微观结构和光吸收能力。

The effects of doping element potassium on the microstructure and properties of doped molybdenum wirer were investigated by electron microscope.

采用电子显微镜研究了掺杂元素钾对于掺杂钼丝显微组织和性能的影响。

But the modulation mechanisms are strongly dependent on the doping element and metal.

但是，调控机理很强地依赖于掺杂元素及金属的类型。

Based on the above factors, a new type of N-type dopant material is needed to avoid the above shortcomings.

基于上述因素，需研究一种N型掺杂剂材料以避免现有碱金属N型掺杂剂材料的缺点。

Shallow Silicided Junctions Formed by Dopant Redistribution of As~+ and BF_2~+ Implanted into CoSi_2

CoSi2中As~+和BF2~+注入杂质再分布形成硅化物化浅结性能研究

Exact 2-D Analytical Model of Ion Implanted Dopant Redistribution During Annealing

在退火过程中离子注入杂质再分布的二维精确解析模型

Influence of Dopant on the Gas Sensing Property of CdSnO_3

掺杂对CdSnO3气敏性能的影响

Effect of dopant on gas sensitivity of Fe_2O_ 3 nano powders

掺杂对Fe2O3纳米粉体气敏性的影响

The effect of dopant on gas sensitive properties of α─ fe_2o_3 material

掺杂对α&Fe2O3材料气敏性能的影响

The RTP temperature, the RTP time, the cooling rate, the ambient and the dopant atoms influenced the density and distribution of point defects in wafers, and then affected oxygen precipitates.

快速热处理温度、时间、降温速度、退火气氛、掺杂原子等都对硅片中点缺陷的形成及分布产生影响，进而影响氧沉淀的形成。

For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density.

对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。

The results show that with the increase of the boron dopant density, the potential windows of the electrodes become narrower and the background currents become larger.

结果表明，随着掺硼浓度的增加，电极的电势窗口略微变小，背景电流也随之变大。

The study of direct differentiation of embryonic stem cell into dopaminergic neuron in the serum-free medium

无血清培养条件下诱导胚胎干细胞向多巴胺能神经元定向分化的实验研究

Cognitive behavioral deficits and changes of dopaminergic neuron after brain concussion in rats

脑震荡大鼠认知行为障碍及多巴胺能神经元的变化

Experimental Study on Tobacco Components against 6-hydroxydopamine-induced Dopaminergic Neuron Degeneration

烟草成份保护多巴胺神经元作用的研究

α-Synuclein phosphorylation takes part in mouse dopaminergic neuron protection

α-突触核蛋白磷酸化参与小鼠多巴胺能神经元的保护作用

Influence of brain concussion on dopaminergic neuron and nerve fiber in rats

脑震荡对大鼠多巴胺能神经元及神经纤维的影响