A threshold voltage model for short-channel MOSFET is developed by solving a 2-D Possion's equation. The derived DIBL factor can be used to analysis the influence of the parameters on short-channel effects.

  • 通过求解二维泊松方程推导了一个简洁的短沟道MOS的阈值电压模型,得到的DIBL因子可用于分析参数对短沟道效应的影响。

  • 互联网摘选 2025-01-20 17:17:32

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