In order to enhance the incorporation of indium into Ga xAl yIn 1-x-y N, lower growth temperature and higher input ⅴ/ ⅲ ratio should be used and the decomposed fraction of ammonia should be reduced.

  • 为增强铟的并入,应采用低的生长温度,高的/比,氮载气而且须要设法降低到达生长界面前氨的分解。

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