According to negative temperature coefficient of VBE and positive temperature coefficient of VT, a framework of band-gap voltage reference is investigated.

  • 同时利用PNP晶体管发射结电压的负温度特性和发射结差值电压的正温度特性设计了一个带隙基准电压源。

  • 互联网摘选 2025-01-20 17:34:51

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