Moreover, the activation energy is estimated to be 1.1 eV based on the Kissinger equation, which is two times than Cu/ SiO2 ( 0.6 eV), suggesting that inserting Ni-Al-N barrier can improve failure temperature and the stability of interconnect structure.

  • 计算样品失效激活能为1.1eV,几乎是Cu/SiO2的激活能(0.6eV)2倍,表明Ni-Al-N阻挡层的插入可以提高失效温度与互连线结构的热稳定性。

  • 互联网摘选 2025-01-20 19:04:24

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