The major yield includes the tricolor figurines and objects, porcelain, jade and bronze articles , epitaph etc.

The layman in Tang Dynasty died in temples was frequently seen in Epitaph Records.

在现有的唐代墓志中有很多俗人终于寺观之例,其原因大多是志主迫于现实条件的选择.

Epitaph a tomb front, made with white marble.

墓前置有墓志一副, 用汉白玉制成.

Finally, from the above analysis author will conclude the profound reason of epitaph.

最终, 结合以上两方面的研究结果,得出墓志铭文体产生的深隐原因.

The rarest quality in an epitaph is truth.

墓志铭的难能可贵之处是真实.

Because the epitaph is unearthed, the tomb becomes a standard of the same kind of ones.

因有墓志, 故其墓葬形制和梅瓶样式为鉴定同类墓葬形制和梅瓶的标尺.

His epitaph for himself suited man as he wanted him to be.

他为自己撰写的墓志铭十分贴切,他正是希望自己成为这样的人.

These inscriptions can be divided into three categories : epitaphs, biographies and the others.

这些碑传文可分为碑志文 、 状文和其他三类.

In the way of writing, there all kinds of styles of epitaphs and his are grace.

在写作方式上, 曾巩所创作的墓志铭不拘一格,因事设体,平中见奇,文采斐然.

Reading the epitaphs, our only salvation lies in resurrecting the dead and burying the living.

念过许多墓志铭之后, 会想到我们(这个世界)的惟一获救之路就在于让死人统统复活而把活人统统埋葬.

There are three procedures in LED production, namely epitaxial wafer, tube core and encapsulation.

在LED生产过程中, 主要有外延片生长 、 芯片和封装三个环节.

Single wafer silicon epitaxial CVD equipment has very good thickness a nd resistivity uniformity.

使用单片式外延炉生产的硅外延材料具有良好的厚度和电阻率均匀性.

Homogeneous , strained epitaxial SiGe films on silicon substrates were used.

在硅基板上使用了均匀、应变的外延SiGe薄膜.

It is shown that the epitaxial layers have flat interface of heterojunctions and good crystal quality.

结果表明外延层具有平坦的异质结界面和良好的晶体特性.

And a brief description of the development of epitaxial The number of shape Combination.

并简单描述数形结合发展的外延.

Epitaxial layers of InSb and InAs _ xSb _ ( 1-x ) on ( 111 ) InSb and ( 100 ) GaAs substrate have been grown by MBE technique.

在 ( 111 ) InSb和 ( 100 ) GaAs衬底上,用分子束外延技术生长了InSb和InAs_xSb_ ( 1-x ) 外延层.

Backwardness in high quality epitaxial wafer has limited greatly the development of Chinese LED industry.

高质量的外延片已经成为中国LED产业发展的主要制约环节.

The four-probe method is used on very thin samples such as epitaxial wafers and conductive coatings.

四探针法用在非常薄的样品,例如外延晶圆片和导电涂层上.

BaTiO 3 ( BTO ) ferroelectric thin films were deposited directly on Si ( 100 ) single crystal substrates with laser molecular beam epitaxy ( LMBE ).

利用激光分子束外延(LMBE ) 方法在Si ( 100 ) 基片上直接生长BaTiO3 ( BTO ) 铁电薄膜.

Impurity doped during epitaxy will diffuse in the epitaxial layer and even into the substrate.

在半导体器件制造的外延工艺中,外延生长时通常要掺入杂质.

The crystal growth by glow discharge sputterings and ion beam sputterings and thecrystal epitaxy are introduced.

介绍了气相中晶体生长的方法,如辉光放电溅射法和离子束溅射沉积法以及晶体外延生长的方法.