The sheet resistance of the films can be controlled by changing doping amount of F ions and choosing favorite process conditions, the minimum is 10 Ω/ □.

Firstly, high-quality a-Si films are prepared using PECVD. Resistivity of a-Si film is well controlled by gas doping.

论文首先研究了采用PECVD制备高品质a-Si薄膜的工艺，通过气相掺杂有效地调整了薄膜电阻率；

Controlled Synthesis and Doping of Single-Crystalline 6H-SiC Nanowire and Its Optic Properties

单晶6H-SiC纳米线的可控掺杂及光学特性

The structural transformation of the symmetric icosahedron is strongly related to the initial configuration, atomic number and atomic distribution, and can be controlled by doping hetero atoms and changing their compositions and distributions.

匀称的20面体结构转变与团簇的初始结构、原子数和组元分布密切相关。而且，这种相变可以通过不同物性组元的添加、含量和原子分布的改变进行控制。

The Curie temperature, coercivity and permeability can be controlled by doping barium ferrite with other elements. That enhanced the performance of barium ferrite.

利用不同的元素掺杂可以对钡铁氧体的居里温度、矫顽力、磁导率进行控制，从而提高钡铁氧体性能。

He performances and features of the impregnated cathode with alloy matrix, the impregnated cathode with controlled doping alloy film and the impregnated alloy matrix cathode with alloy film coating have been clearly reviewed in this paper.

明确地概述了合金基底浸渍阴极，可控合金浸渍阴极，覆合金膜浸渍合金基底阴极的性能和特征。

We have successfully developed a low noise high gain HFET with special doping profile sturcture and InGaAs/ GaAs two channels.

本文研究了具有InGaAs/GaAs双沟道和独特掺杂分布的低噪声高增益HFET。

An analytical breakdown model for thin epitaxial RESURF device with step doping profile drift is presented in this paper.

提出薄外延阶梯掺杂漂移区RESURF结构的耐压解析模型。

Doping Profile and I-V Characteristic Analysis for Hi-Lo GaAs IMPATT

GaAs高-低IMPATT二极管的掺杂分布和伏安特性分析

Study on Doping Profile of GaAs Epilayer

GaAs外延层掺杂分布的研究

A new design of channel doping profile, called SCD, is also discussed here in detail.

另外，还讨论了一种新型的沟道掺杂设计，命名为SCD。

An Analytical Model for Optimizing SOI High Voltage Device with Step Doping Profile in Drift Region

阶梯掺杂漂移区SOI高压器件浓度分布优化模型

Measurement of the fine structure of semiconductor doping profile using C V technique

半导体掺杂分布精细结构的测量技术研究

When doping with the TM atom, the peaks of DOS shift to lower energy levels and there is significant spin splitting for TM 3d, B 2p, and N 2p electrons around the Fermi level.

因为杂质原子的引入，态密度向低能级移动并且TM3d，B2p和N2p电子态有强烈的自旋分裂。

Doping magnesium atom and lithium atom reduce the binding energy of pure aluminum clusters, but do not change the trends which the binding energy increases with size.

Mg原子和Li原子的掺杂，降低了团簇的结合能，但并不改变结合能随团簇尺寸增大而增大的趋势。

In addition, the ability of optical absorption of TiO2 with doping N atom in the range of visible light is enhanced.

N原子的掺入使材料的光学吸收能力在可见光范围内有较大的增加。

The distribution of Zn in the samples was observed. The effects of excess Zn and doping atom In on thermoelectric properties of β-Zn_4Sb_3 compound were investigated systematically.

系统地研究了在β-Zn4Sb3化合物中第二相Zn含量和分布状态以及掺杂元素In对β-Zn4Sb3基热电材料热电传输特性的影响规律。

By doping donor element in the film, P-type semiconductor film will be achieved, and this is quite essential for the development of semiconductor materials with P-N junction.

而通过在薄膜中掺杂受主元素，可以获得P型半导体薄膜，从而对于发展具有P-N结结构的半导体材料有重大帮助。

The reason of the room-temperature resistivity decreasing distinctly is part of doping Cl element substituting O-site as donor dopant.

室温电阻率大幅降低的原因，是引入的Cl元素有一部分能进入晶格取代O位起施主作用。

Effect of Doping K Element on Properties of Lithium Zirconate as CO_2-absorbent

K元素的掺杂对锆酸锂材料吸收CO2性能的影响

The effects were reviewed by changing the doping element, doping consent and calcination temperature. Characterizations of micro-structure and UV-vis absorption of modified-TiO2 photocatalyst were analysed using XRD, SEM, UV-vis.

通过改变掺杂元素、掺杂量和焙烧温度等考察对TiO2光催性的影响，同时利用XRD、SEM、UV-Vis等分析手段，表征了改性TiO2光催化剂微观结构和光吸收能力。