An Analytical Model for Optimizing SOI High Voltage Device with Step Doping Profile in Drift Region

Measurement of the fine structure of semiconductor doping profile using C V technique

半导体掺杂分布精细结构的测量技术研究

When doping with the TM atom, the peaks of DOS shift to lower energy levels and there is significant spin splitting for TM 3d, B 2p, and N 2p electrons around the Fermi level.

因为杂质原子的引入，态密度向低能级移动并且TM3d，B2p和N2p电子态有强烈的自旋分裂。

Doping magnesium atom and lithium atom reduce the binding energy of pure aluminum clusters, but do not change the trends which the binding energy increases with size.

Mg原子和Li原子的掺杂，降低了团簇的结合能，但并不改变结合能随团簇尺寸增大而增大的趋势。

In addition, the ability of optical absorption of TiO2 with doping N atom in the range of visible light is enhanced.

N原子的掺入使材料的光学吸收能力在可见光范围内有较大的增加。

The distribution of Zn in the samples was observed. The effects of excess Zn and doping atom In on thermoelectric properties of β-Zn_4Sb_3 compound were investigated systematically.

系统地研究了在β-Zn4Sb3化合物中第二相Zn含量和分布状态以及掺杂元素In对β-Zn4Sb3基热电材料热电传输特性的影响规律。

By doping donor element in the film, P-type semiconductor film will be achieved, and this is quite essential for the development of semiconductor materials with P-N junction.

而通过在薄膜中掺杂受主元素，可以获得P型半导体薄膜，从而对于发展具有P-N结结构的半导体材料有重大帮助。

The reason of the room-temperature resistivity decreasing distinctly is part of doping Cl element substituting O-site as donor dopant.

室温电阻率大幅降低的原因，是引入的Cl元素有一部分能进入晶格取代O位起施主作用。

Effect of Doping K Element on Properties of Lithium Zirconate as CO_2-absorbent

K元素的掺杂对锆酸锂材料吸收CO2性能的影响

The effects were reviewed by changing the doping element, doping consent and calcination temperature. Characterizations of micro-structure and UV-vis absorption of modified-TiO2 photocatalyst were analysed using XRD, SEM, UV-vis.

通过改变掺杂元素、掺杂量和焙烧温度等考察对TiO2光催性的影响，同时利用XRD、SEM、UV-Vis等分析手段，表征了改性TiO2光催化剂微观结构和光吸收能力。

The effects of doping element potassium on the microstructure and properties of doped molybdenum wirer were investigated by electron microscope.

采用电子显微镜研究了掺杂元素钾对于掺杂钼丝显微组织和性能的影响。

But the modulation mechanisms are strongly dependent on the doping element and metal.

但是，调控机理很强地依赖于掺杂元素及金属的类型。

Based on the above factors, a new type of N-type dopant material is needed to avoid the above shortcomings.

基于上述因素，需研究一种N型掺杂剂材料以避免现有碱金属N型掺杂剂材料的缺点。

Shallow Silicided Junctions Formed by Dopant Redistribution of As~+ and BF_2~+ Implanted into CoSi_2

CoSi2中As~+和BF2~+注入杂质再分布形成硅化物化浅结性能研究

Exact 2-D Analytical Model of Ion Implanted Dopant Redistribution During Annealing

在退火过程中离子注入杂质再分布的二维精确解析模型

Influence of Dopant on the Gas Sensing Property of CdSnO_3

掺杂对CdSnO3气敏性能的影响

Effect of dopant on gas sensitivity of Fe_2O_ 3 nano powders

掺杂对Fe2O3纳米粉体气敏性的影响

The effect of dopant on gas sensitive properties of α─ fe_2o_3 material

掺杂对α&Fe2O3材料气敏性能的影响

The RTP temperature, the RTP time, the cooling rate, the ambient and the dopant atoms influenced the density and distribution of point defects in wafers, and then affected oxygen precipitates.

快速热处理温度、时间、降温速度、退火气氛、掺杂原子等都对硅片中点缺陷的形成及分布产生影响，进而影响氧沉淀的形成。

For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density.

对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。

The results show that with the increase of the boron dopant density, the potential windows of the electrodes become narrower and the background currents become larger.

结果表明，随着掺硼浓度的增加，电极的电势窗口略微变小，背景电流也随之变大。