An Anomaly Phenomenon of the Interaction Between Donor Doping and Acceptor Doping in Highly Donor-Doped BaTiO_3 Ceramics

Effect of Liquid-phase Donor Doping and High Calcium Adding on Performance of PTC Material

液相施主及高钙添加对PTC材料性能的影响

Research on Semiconductor Ceramic Materials: Double Donor Doping BaTiO_3

双施主掺杂BaTiO3半导体陶瓷材料的研究

Using liquid-phase donor doping and calcium adding etc method to optimize the formulation, a PTCR material was acquired.

采用液相施主掺杂和添加钙等方法优化配方制成PTCR材料。

Research on Donor Doping of TiO_2-based Varistor Ceramics

TiO2系压敏陶瓷施主掺杂研究

The effect of doping agent on synthesis magnesium nickel hydrogen storage alloys through XRD, SEM and measure equipment of dehydriding velocity and dehydriding content are studied.

借助XRD、SEM和自制放氢量的测试装置研究了掺杂对氢化燃烧合成镁镍储氢合金性能的影响。

By tetrabutyl titanate as titanium source, the ammonium carbonate as the doping agent, used the sol-gel method to prepare titanium dioxide photocatalyst.

以钛酸四丁酯为钛源，碳酸铵为掺杂剂，采用溶胶-凝胶法制备了含氮的二氧化钛光催化剂。

The effects of concentrations of aniline, oxidizing agent, doping agent, and the reaction temperature and period on the conductivity of the composite fiber were discussed.

讨论了氧化剂与苯胺的初始摩尔比、苯胺单体浓度、掺杂酸浓度、反应温度及反应时间对纤维导电性能的影响。

So phosphoric acid as the doping agent, the PANI prepared by interfacial polymerization is more suitable for the electrode materials.

说明磷酸作为掺杂剂，界面法制备出的聚苯胺更适宜用作电极材料。

Conductive Polyaniline was prepared by chemical oxidation using aniline as the starting material and hydrocarbon as the doping agent.

以苯胺为主要原料，盐酸作掺杂剂，采用化学氧化法制备出导电聚苯胺。

Polyaniline of nanostructure was prepared by interfacial polymerization using hydrochloric acid as doping agent and reaction medium.

采用盐酸作为掺杂剂和反应介质，通过界面聚合制备纳米结构的聚苯胺。

Concentration effect of oxidant and doping agent on structure and properties of polyaniline

反应物中氧化剂和掺杂剂浓度对聚苯胺性能与结构的影响

The results show that they are different from the conventional PTCR ceramic materials in the following aspects: The effect of Sb doping density on resistance temperature characteristics of the ceramics materials is high;

结果表明：微量元素Sb的掺杂量对线性电阻温度特性影响较大；

Influence of Doping Density on Hot-carrier-effect in Grooved Gate PMOSFET

杂质浓度对槽栅PMOSFET抗热载流子特性的影响

The experimental results show that pulse width decreases with the increasing of quartz powder doping density and liquid depth.

实验结果表明，产生KrF短脉冲的宽度随酒精中掺杂石英粉末浓度、酒精悬浊液厚度、增加而减小。

The research results indicate that with the increase of doping density in channel, the hot carrier effect immunity becomes better.

研究发现，随着沟道杂质浓度的提高，器件的抗热载流子能力增强；

For the grooved gate PMOSFET, the study results prove that with the increase of channel doping density, the threshold voltage increases, the drain current driving ability decreases, and the hot carrier effect is suppressed, as in the planar device.

研究发现，随着沟道掺杂浓度的提高，与平面器件相同，槽栅器件的阈值电压提高，漏极驱动能力降低，抗热载流子效应增强；

The effect of different doping density and different testing temperature on the impedance spectrum is studied based on the simulation equivalent circuit within the electrolytic film of CeO2 base.

根据CeO2基电解质薄膜的内部模拟等效电路，研究了不同掺杂浓度及不同测试温度对阻抗谱的影响。

The principle of ion doping and valence compensation was adopted to develop a new catalyst Cu-Zn-Al-Zr which was derived from traditional Cu-Zn-Al catalyst by adding a small amount of ZrO_2 for MeOH synthesis under low pressure.

在Cu-Zn-Al甲醇合成催化剂中添加适量的氧化锆助剂，制得Cu-Zn-Al-Zr催化剂及表征其特性。

Activation of Fe Doping and Electrical Compensation in Semi-Insulating InP

半绝缘InP的铁掺杂激活与电学补偿

Doping and compensation in II VI semiconductors ①

Ⅱ-VI族半导体的掺杂与补偿