cmp的例句大全

After the 2.2.15 cell line was planted 24 hours, CMP and Alcilovir ( ACV ) were added.

将2.2.15细胞株种板24h后, 分别加入羧甲基茯苓多糖和阳性对照药阿昔洛韦 ( ACV ) .

The CMP process is also used to control film thickness and removal of barrier layers.

CMP技术也用于控制薄膜厚度及剥离隔离层.

The rates of sensitivity to aminopenicillin ( AMP ) , chloramphenicol ( CMP ) , kanamycin ( KM ) , complex sulfamethoxazole-trimethoprim ( COS ) , gentamicin ( GN ) , neomycin ( NM ), tobramycin ( TOB ) , amikacin ( AKN ) and norfloxacin ( NOR ) were high, between 84.4 % and 95.5 %.

对链霉素、痢特灵 、 羧 苄青霉素及 四环素 的耐药率较高, 在129%～457%之间, 对红霉素的耐药率高达949%.

Recent investigation shows that CeC & gt ; 2 nanoparticles can be used as CMP slurry to polish IC chip.

最新研究表明,纳米 CeO _2可用于集成电路芯片加工的化学机械抛光(CMP)浆料.

Mathematical models were developed to simulate particle reduction in CMP slurry distribution systems.

为模拟cmp磨料 分配系统的粒子减少开发了数字模型.

Then its CMP properties on hard disk substrate with nickel-phosphorous plated was studied.

进而研究了其在镍磷敷镀的硬盘基片CMP中 的抛光特性.

The presented parallel algorithms can be referred in designing CMP system and optimizing other applications.

这些算法的提出,为今后CMP系统的设计以及其他应用在CMP体系结构上的并行优化提供了参考.

Under the optimal conditions, about 45.7 % CMP was transformed to CTP.

在最优化条件下, 转化率达45.7%.

The major problem in Cu CMP is dishing, serious dishing will cause the yield loss.

铜化学机械抛光是近些年发展最快的一种工艺,铜碟形是铜化学机械抛光工艺中的主要问题之一.

It is noted that there is a thin fluid film between the loaded asperities and the wafer being polished in CMP process, thereby a flow system with nano scale film is formed in.

在简述化学机械抛光技术的基础上，提出化学机械抛光过程中，受载的粗糙峰和被抛光的晶片表面之间存在一纳米量级的薄流体膜，形成了纳米级薄膜流动系统。

Study on the CMP Property of GaAs Wafer Using Nano Cerium Dioxide Abrasive

纳米CeO2磨料对GaAs晶片的CMP性能研究

Objective To review the experience of surgical intervention in the congenital multicystic pulmonary ( CMP).

目的评价外科手术治疗先天性多囊肺的临床效果。

However, Dain Sundstrom has been busy closing issues, including initial implementations of the automatic schema creation for CMP.

但是，Dain Sundstrom已经在忙于解决问题，包括为CMP自动创建模式的初始实现。