mosfet的例句大全

To achieve this performance, it requires more from each MOSFET of the MOSFET small-cell component.

为达到这种性能, 它要求每个MOSFET由更多更小的MOSFET原胞组成.

A depletion-mode MOSFET virtually eliminates power wasted in switcher's start-up circuitry.

在开关上电电路中,耗尽型MOSFET实质上消除了能量损耗.

Skilled with MOSFET device engineering, especially in its reliability and performance aspects.

具有MOSFET元件工程技能,其中, 尤其著重于可靠度及高效能方面.

High frequency MOSFET integrated controller and SEM driving motor constitute advanced SEM walking control system.

高频MOSFET集成控制器和SEM驱动电机组成先进的SEM行走控制系绝.

P-channel lateral MOSFET. High power 125 W. Drain-source voltage 250 V. Storage temperature range.

P沟道MOSFET的 外侧. 高功率125瓦特的漏源电压250V.储存温度范围.

The main circuit is composed of uncontrolled rectifier and the single-phase bridge inverter using MOSFET.

该主电路采用不控整流,MOSFET单相全桥逆变电路.

Ultimate analysis magnetic elements'characteristic, transformer, inductance design and MOSFET switch component's shaping.

最后分析了磁性元件的特性, 变压器, 电感的设计和MOSFET开关器件 的选型.

Apply advanced reversing technology and imported MOSFET power switch.

采用先进的逆变技术和进口MOSFET功率开关器件.

The PA 85 is a high voltage, high precision MOSFET operational amplifier.

PA85是一种高压 、 高精度的MOSFET运算放大器.

MOSFET more dominant direction is the direction to the development of very low internal resistance.

MOSFET的更为主导的方向是向极低内阻等方向发展.

A new type power MOSFET lower on-resistance and gate charge.

新型功率MOSFET——QFET带有低通态电阻和栅极电荷.

Introduce the principle of MOSFET AC square wave inverter power source.

介绍了MOSFET交流方波逆变电源的工作原理.

The half-bridge inverter circuit is used IGBT as switch with the advantages of MOSFET and GTR.

主电路使用集MOSFET和GTR的 优点于一身的IGBT作为开关管,构成半桥逆变电路.

Familiar with PWM , PFM control chip, IGBT, MOSFET, high-frequency transformers and magnetic elements.

熟悉PWM、PFM控制芯片 、 IGBT, MOSFET等功率器件 、 高频变压器、电感等磁性元件.

TOPSwitch series integrated with PWM controller and voltage MOSFET has high performance and reliability.

芯片集PWM控制器和高压MOSFET于一体,性能优异,可靠性高.

Fabrication and Investigation of High K Gate Dielectric Materials for Next Generation MOSFET Applications

应用于下一代MOSFET中的高介电栅介质材料的研究

Gate Current for MOSFETs with High k Dielectric Materials Theoretical Modeling of Gate Current Distribution in MOSFET

高k栅介质MOSFET的栅电流模型（英文）MOSFET栅电流分布的理论建模

It is used to improve the ZTC model of MOSFET which works at wide operation temperature range and very high temperatures.

并用该方程修正和完善了宽温区，耐高温MOSFET的ZTC模型。

A threshold voltage model for short-channel MOSFET is developed by solving a 2-D Possion's equation. The derived DIBL factor can be used to analysis the influence of the parameters on short-channel effects.

通过求解二维泊松方程推导了一个简洁的短沟道MOS的阈值电压模型，得到的DIBL因子可用于分析参数对短沟道效应的影响。

The main products include IGBT Module, IPM Module, MOSFET Module, Thyristor Module and Diode Module.

三菱电机的主要产品包括IGBT模块, IPM模块, MOSFET模块, 晶闸管模块和二极管模块等.