silicon的例句大全

Special knife to scratch skin and silicon modified rubber roller are adopted.

全不锈钢材料制造,采用特殊划皮刀划皮,硅橡胶辊对滚剥皮.

Silicon carbide space-borne mirror was produced by reaction bonded process.

采用反应烧结工艺制备了碳化硅空间用反射镜坯体.

The Element hot zone is a self bonded silicon carbide.

这种硅碳棒的发热部是自发结合的碳化硅.

Production silicon carbide blocks, sand particle size, powder three series over 100 standard products.

年生产碳化硅块 、 粒度砂 、 微粉三大系列100多个规格产品.

The resistivity and complex electromagnetic parameters of silicon carbide composite fibers containing nickel were studied.

研究了含镍碳化硅纤维的电阻率和复电磁参数.

The silicon carbide rod is allowed to work for 4 hours continuously at the highest temperature.

硅碳棒在最高温度下允许连续工作4小时.

Saint-Gobain Ceramics & Plastics acquires the Brazilian company Casil, first silicon carbide producer in Latin America.

圣戈班 集团陶瓷 及 塑料部并购拉丁美洲最大的碳化硅生产厂商—巴西的Casil公司.

Elements are manufactured of green silicon carbide that is classed as an excess electron type semiconductor.

这种硅碳棒由一种新型的碳化硅制成,被归类为超级半导体.

These nano wires are silicon carbide single crystalline that was confirmed electron diffraction and Raman spectroscopy.

拉曼光谱与高分辨率透射电镜以及电子衍射的结果表明该纳米线是碳化硅的单晶纳米线.

Production launch of silicon carbide particulate filters for the PSA Peugeot Citro? n diesel vehicles.

2001年:开始为标致 雪铁龙 汽车集团的柴油机机车生产碳化硅过滤器.

Our main products are Silicon Carbide, Alumina Ceramic, Tungsten Carbide, and Carbon-Graphite Seal Rings.

我们的主要产品是碳化硅 、 硬质合金 、 碳石墨密封环和氧化铝陶瓷制品.

The determination process of Si in the tellurium dioxide by Silicon Molybdenum Blue Spectrophotometry is investigated.

研究二氧化碲中硅的硅钼蓝分光光度测定方法。

Factors Affecting on NTD Silicon Doping Precision

影响NTD硅掺杂精度的因素

The paper gives a detailed account of various kinds factors which affect on NTD silicon doping precision on the basis of a great amount of experiments and measurements. It also gives some quantitative and qualitative results.

本文在大量实验测量的基础上，对影响NTD硅掺杂精度的因素作了较为详细的研究，给出了一些定量和定性的结果。

Influence of Silicon Doping on the Structure and the Magnetic Property of γ-Fe_2O_3 Particle

掺硅对γ-Fe2O3微粒的结构和磁性能的影响

The oxygen parameter as well as the mean size of interstices of tetrahedral and octahedral also appears a certain influence of silicon doping.

掺入的Si~（4+）阳离子有很强的占据类尖晶石结构中四面体位的趋势，对氧参数及四面体位和八面体位的平均间隙大小也有一定影响。

The influence factors of LAPS characteristics such as silicon doping content, insulating layer thickness and light intensity are analyzed by means of circuit simulation method. The simulation results correctly reflect the reality characteristics of LAPS.

在此基础上，采用电路模拟方法仿真分析了影响LAPS特性的因素：硅掺杂浓度、绝缘层厚度以及光强等，仿真结果正确地反映了LAPS的实际特性。

Quality Control for Silicon Neutron Doping in SPRR-300

300~反应堆单晶硅掺杂质量控制

Studies on the mechanism of leaching silicon and aluminum from bentonite have been processed by adjusting reaction time, calcination temperature, ratio of alkali to bentonite, the kind of alkali etc.

并通过改变反应时间、煅烧温度、碱土比、碱的种类、以及焙烧与否，对膨润土的硅、铝浸出机理作了比较深入的研究。

Determination of SiO_2 in Limestone by Spectrophotometry with Microwave Alkaline Digestion Product from 300 item to 10,000 item above each kind high, middle-grade silicon fine powder.

微波碱消解光度法测定石灰石中二氧化硅含量产品从300目至1万目以上的各种高、中档硅微粉、二氧化硅。