掺杂的例句大全

The effects of concentrations of aniline, oxidizing agent, doping agent, and the reaction temperature and period on the conductivity of the composite fiber were discussed.

讨论了氧化剂与苯胺的初始摩尔比、苯胺单体浓度、掺杂酸浓度、反应温度及反应时间对纤维导电性能的影响。

So phosphoric acid as the doping agent, the PANI prepared by interfacial polymerization is more suitable for the electrode materials.

说明磷酸作为掺杂剂，界面法制备出的聚苯胺更适宜用作电极材料。

Conductive Polyaniline was prepared by chemical oxidation using aniline as the starting material and hydrocarbon as the doping agent.

以苯胺为主要原料，盐酸作掺杂剂，采用化学氧化法制备出导电聚苯胺。

Polyaniline of nanostructure was prepared by interfacial polymerization using hydrochloric acid as doping agent and reaction medium.

采用盐酸作为掺杂剂和反应介质，通过界面聚合制备纳米结构的聚苯胺。

Concentration effect of oxidant and doping agent on structure and properties of polyaniline

反应物中氧化剂和掺杂剂浓度对聚苯胺性能与结构的影响

The results show that they are different from the conventional PTCR ceramic materials in the following aspects: The effect of Sb doping density on resistance temperature characteristics of the ceramics materials is high;

结果表明：微量元素Sb的掺杂量对线性电阻温度特性影响较大；

The experimental results show that pulse width decreases with the increasing of quartz powder doping density and liquid depth.

实验结果表明，产生KrF短脉冲的宽度随酒精中掺杂石英粉末浓度、酒精悬浊液厚度、增加而减小。

For the grooved gate PMOSFET, the study results prove that with the increase of channel doping density, the threshold voltage increases, the drain current driving ability decreases, and the hot carrier effect is suppressed, as in the planar device.

研究发现，随着沟道掺杂浓度的提高，与平面器件相同，槽栅器件的阈值电压提高，漏极驱动能力降低，抗热载流子效应增强；

The effect of different doping density and different testing temperature on the impedance spectrum is studied based on the simulation equivalent circuit within the electrolytic film of CeO2 base.

根据CeO2基电解质薄膜的内部模拟等效电路，研究了不同掺杂浓度及不同测试温度对阻抗谱的影响。

Activation of Fe Doping and Electrical Compensation in Semi-Insulating InP

半绝缘InP的铁掺杂激活与电学补偿

Doping and compensation in II VI semiconductors ①

Ⅱ-VI族半导体的掺杂与补偿

Finally HALL doping test on the material and substrate temperature were optimized.

最后用3ALL测试对材料的掺杂和衬底温度进行了优化。

For the lasers with symmetrical waveguide, the photon absorption of the non-active region material is proportional to the doping concentration of material, which causes serious absorption loss.

对称波导结构激光器中，非有源区材料对光子的吸收与其掺杂浓度成正比关系，吸收损耗比较严重。

Quantum Chemical Study on the Doping of Anode Material for Lithium-ion Battery and on the Reaction Mechanism of the Isomerization: HNC → HCN

锂离子电池掺杂正极材料的量化计算及氢氰酸协同反应机理研究

Neutron-transmutation doping for InP material

磷化铟材料的中子嬗变掺杂

Synthesis and Property of Al Doping Li-Ni-O Cathode Material for Li-ion Batteries

Al掺杂Li-Ni-O系列电池正极材料的制备与性能研究

Firstly, high-quality a-Si films are prepared using PECVD. Resistivity of a-Si film is well controlled by gas doping.

论文首先研究了采用PECVD制备高品质a-Si薄膜的工艺，通过气相掺杂有效地调整了薄膜电阻率；

The effect of the ultraviolet-visible light transmittance, doping amount of thorium dioxide and neodymium sesquioxide, pH value of the aqueous solution of sodium dodecyl benzenesulfonate and some other factors on the photodegradation rate were studied.

研究了复合膜的紫外-可见光透过性能和二氧化钍与三氧化二钕的掺杂量、十二烷基苯磺酸钠水溶液的pH值等因素对光解率的影响。

Chromium doped titanium dioxide Cr-TiO2 was prepared by the sol-gel method. The effects of annealing temperature on the crystal structure, oxidation states of chromium, and UV-vis absorption proper-ties of Cr-TiO2 were investigated in details.

采用溶胶-凝胶法制备了铬掺杂二氧化钛（Cr-TiO2），并对经过不同温度烧结的Cr-TiO2的结构、吸收光谱及样品中铬的氧化态等进行了表征。

The charging and discharging result indicated that when the alloying element are many ( M: V ≥ 0.25:1.75), the material charging and discharging platform reduces, this causes the material the platform to be stable, which is advantageous in using for the battery charging and discharging.

充放电结果表明，当掺杂元素多时（M：V≥0.25：1.75），材料的充放电平台减少，这就使得材料的平台更加稳定，有利于用电池充放电，改善充放电效率。