掺杂的例句大全

The RTP temperature, the RTP time, the cooling rate, the ambient and the dopant atoms influenced the density and distribution of point defects in wafers, and then affected oxygen precipitates.

快速热处理温度、时间、降温速度、退火气氛、掺杂原子等都对硅片中点缺陷的形成及分布产生影响，进而影响氧沉淀的形成。

The effect of dopant on gas sensitive properties of α─ fe_2o_3 material

掺杂对α&Fe2O3材料气敏性能的影响

Effect of dopant on gas sensitivity of Fe_2O_ 3 nano powders

掺杂对Fe2O3纳米粉体气敏性的影响

Influence of Dopant on the Gas Sensing Property of CdSnO_3

掺杂对CdSnO3气敏性能的影响

But the modulation mechanisms are strongly dependent on the doping element and metal.

但是，调控机理很强地依赖于掺杂元素及金属的类型。

Effect of Doping K Element on Properties of Lithium Zirconate as CO_2-absorbent

K元素的掺杂对锆酸锂材料吸收CO2性能的影响

By doping donor element in the film, P-type semiconductor film will be achieved, and this is quite essential for the development of semiconductor materials with P-N junction.

而通过在薄膜中掺杂受主元素，可以获得P型半导体薄膜，从而对于发展具有P-N结结构的半导体材料有重大帮助。

The distribution of Zn in the samples was observed. The effects of excess Zn and doping atom In on thermoelectric properties of β-Zn_4Sb_3 compound were investigated systematically.

系统地研究了在β-Zn4Sb3化合物中第二相Zn含量和分布状态以及掺杂元素In对β-Zn4Sb3基热电材料热电传输特性的影响规律。

Doping magnesium atom and lithium atom reduce the binding energy of pure aluminum clusters, but do not change the trends which the binding energy increases with size.

Mg原子和Li原子的掺杂，降低了团簇的结合能，但并不改变结合能随团簇尺寸增大而增大的趋势。

Measurement of the fine structure of semiconductor doping profile using C V technique

半导体掺杂分布精细结构的测量技术研究

An Analytical Model for Optimizing SOI High Voltage Device with Step Doping Profile in Drift Region

阶梯掺杂漂移区SOI高压器件浓度分布优化模型

A new design of channel doping profile, called SCD, is also discussed here in detail.

另外，还讨论了一种新型的沟道掺杂设计，命名为SCD。

Study on Doping Profile of GaAs Epilayer

GaAs外延层掺杂分布的研究

Doping Profile and I-V Characteristic Analysis for Hi-Lo GaAs IMPATT

GaAs高-低IMPATT二极管的掺杂分布和伏安特性分析

An analytical breakdown model for thin epitaxial RESURF device with step doping profile drift is presented in this paper.

提出薄外延阶梯掺杂漂移区RESURF结构的耐压解析模型。

We have successfully developed a low noise high gain HFET with special doping profile sturcture and InGaAs/ GaAs two channels.

本文研究了具有InGaAs/GaAs双沟道和独特掺杂分布的低噪声高增益HFET。

The Curie temperature, coercivity and permeability can be controlled by doping barium ferrite with other elements. That enhanced the performance of barium ferrite.

利用不同的元素掺杂可以对钡铁氧体的居里温度、矫顽力、磁导率进行控制，从而提高钡铁氧体性能。

Controlled Synthesis and Doping of Single-Crystalline 6H-SiC Nanowire and Its Optic Properties

单晶6H-SiC纳米线的可控掺杂及光学特性

Firstly, high-quality a-Si films are prepared using PECVD. Resistivity of a-Si film is well controlled by gas doping.

论文首先研究了采用PECVD制备高品质a-Si薄膜的工艺，通过气相掺杂有效地调整了薄膜电阻率；

Synthesis and Property of Al Doping Li-Ni-O Cathode Material for Li-ion Batteries

Al掺杂Li-Ni-O系列电池正极材料的制备与性能研究