A novel structure of ideal ohmic contact p+ ( SiGeC)-n& n+ diodes with three-step graded doping concentration in the base region is presented, and the changing doping concentration gradient is also optimized.

  • 将新器件结构与新型半导体材料相结合,提出了一种新型的n-区三层渐变掺杂理想欧姆接触型p+(SiGeC)-n&n+异质结功率二极管,并对n-区的杂质分布梯度进行了优化。

  • 互联网摘选 2025-01-20 12:32:27

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