The Way of the Dynamic State Data Handled Synthetic Method ( DHSM) for Environmental Forecast

In order to improve effect of traditional modulation code, a new modulation-array ( MA) code and a novel soft-decision method corresponding to MA code are proposed for data processing in DHSS.

为了克服传统调制码的弊端，提出了一种适用于DHSS新的调制码：调制-阵列码的编译码方法及其相应的软判决度量方法。

Results: Among the patients with DHSS, 62.96% were Hp associated chronic gastritis ( compared with that in the group of SAS, P < 0.05).

结果：Hp相关性慢性胃炎中脾胃湿热型占62.96%（P<0.05）；

Objective: To study the diagnosis, treatment and prognosis of antiepileptic drug hypersensitive syndrome ( DHSS).

目的：探讨小儿抗癫痫药物过敏反应综合征的诊断、治疗及预后。

Based on the complicated noise characteristics in digital holographic storage system ( DHSS), some methods of channel code in digital communication are introduced.

针对数字体全息存储系统（DHSS）中复杂噪声的特点，从数字通信中信道编码的观点出发，讨论了采用数字信号处理方法来抑制DHSS中噪声干扰的技术。

Then the digital signal processing parts of the DHTR system are implemented on a Field Programmable Gate Array ( FPGA).

然后用FPGA实现了DHTR系统发射端和接收端的基带数字信号处理部分；

Two DIAR couplers were synthesized with 2 ( isopropylamino) benzenethiol as timing group, which was synthesized from benzothiazole and triphosgene used as a substitute of phosgene, and good result was obtained.

从苯并噻唑开始，制备了2异丙氨基苯硫酚，并把它作为定时基团，合成了2种DIAR成色剂。在中间体的合成中，用固体光气代替光气得到了理想结果。

The inhibitor released from the reaction of DIR or DIAR coupler with QDI decreases the development rate of silver halide grams, so it controlled the formation rate of QDI.

DIR和DIAR成色剂在与QDI反应后所释放的显影抑制剂抑制了卤化银的显影进程，从而控制了QDI的形成速率。

The application of three DIAR couplers in color negative film is studied, and the data of sensitivity, fog, particularly, reduced graininess, improved interlayer effect have been obtained.

对3个DIAR成色剂在彩色负片中的应用进行了研究，得到了它们对感光度、灰雾影响的数据，特别是得到了它们在降低颗粒度和改善层间效应方面的数据。

Kinetics of the development inhibitor releasing coupler in the color imaging process ⅰ. the reaction of dir and DIAR coupler with QDI in gelatin layer

释放显影抑制剂型成色剂在彩色影像形成过程中的动力学研究Ⅰ.在明胶层中DIR和DIAR成色剂与QDI反应的动力学

, disclosed in Oct. 1991 a new generation of DIAR couplers.

Lau于1991午10月提出的新一代的DIAR成色刑的结构（？）

The relationship between molecular structures of the DIAR couplers and photographic characteristics is also discussed.

并探讨了DIAR成色剂分子结构和照相性能的关系。

The Application study of DIAR Couplers in Color Negative Film

DIAR成色剂在彩色负片中的应用研究

With the run time increasing, however, DIBK formation rate from MIBK and isopropanol condensation dehydration has an obvious drop, though isopropanol dehydrogenation rate and MIBK formation rate from isopropanol and acetone condensation dehydration are still relatively steady.

但随运行周期的延长，尽管其脱氢能力和对异丙醇与丙酮缩合脱水生成MIBK的能力相对稳定，但对MIBK与异丙醇缩合脱水生成DIBK的能力明显降低。

A small quantity of acetone in feed material is advantageous to the increase of the catalyst activity, selectivity of MIBK and DIBK, but excess acetone will make against the synthesis reaction process.

反应物相中少量丙酮的存在有利于催化剂活性、MIBK和DIBK选择性的提高，但过量丙酮的存在对合成反应不利。

A threshold voltage model for short-channel MOSFET is developed by solving a 2-D Possion's equation. The derived DIBL factor can be used to analysis the influence of the parameters on short-channel effects.

通过求解二维泊松方程推导了一个简洁的短沟道MOS的阈值电压模型，得到的DIBL因子可用于分析参数对短沟道效应的影响。

The DMG structure coupling with the insulator halo, the threshold voltage roll-off and drain-induced-barrier-lowering ( DIBL) decrease and the sub-threshold characteristics have been improved.

由于DMG结构和介质Halo的相互耦合，阈值电压漂移和漏致势垒降低（DIBL：Drain-Induced-Barrier-Lowering）减小，亚阈值特性得到改善。

Compared with the traditional planar MOSFET's, MOSFET's with novel structures have better performance, such as improved SCE, ideal DIBL and sub-threshold slope, as well as higher driving ability.

和传统平面结构MOSFET相比，新结构MOSFET具有更好的性能（如改善的沟道效应（SCE），理想的漏诱生势垒降低效应（DIBL）和亚阈值特性）和更大的驱动电流等。

The subthreshold slope is 69mV/ decade, and it almost has no DIBL effect.

其亚阈值斜率只有69mV/decade，而且几乎没有DIBL效应。

Furthermore, the impacts of the drain voltage is introduced in the model to include the drain induction barrier lower ( DIBL).

此外，还考虑了漏电压的影响，并对阈值电压的解析模型进行了修正，重点研究了漏致势垒降低效应（DIBL）。

The surface potential model in the deep submicrometer FD device is presented by introducting some new parameters to describe the DIBL effect.

通过引入新的参数，对公式进行修正，建立深亚微米全耗尽器件的表面势模型，能够很好地描述漏感应势垒降低效应。