And the brief epitaph in danger's day.

That might serve as an epitaph for Rice's career at the top of American policymaking.

这可能是赖斯身为全美最高决策者的墓志铭.

His epitaph should be: He did us good.

他的墓志铭应当是: 他为我们做了好事.

Epitaph is placed in the tomb stone, Zhiwen and its content is divided into two parts.

墓志是置于墓中的石刻, 志文以其内容而分为两部分.

Epitaph writing table and, presumably is great calligrapher of the Northern Wei Liu Fang.

表和墓志的书写人, 据推测是北魏大书法家刘芳.

The major yield includes the tricolor figurines and objects, porcelain, jade and bronze articles , epitaph etc.

随葬品主要有三彩俑及器物、彩绘陶俑 、 瓷器 、 玉器、铜器及墓志等.

The layman in Tang Dynasty died in temples was frequently seen in Epitaph Records.

在现有的唐代墓志中有很多俗人终于寺观之例,其原因大多是志主迫于现实条件的选择.

Epitaph a tomb front, made with white marble.

墓前置有墓志一副, 用汉白玉制成.

Finally, from the above analysis author will conclude the profound reason of epitaph.

最终, 结合以上两方面的研究结果,得出墓志铭文体产生的深隐原因.

The rarest quality in an epitaph is truth.

墓志铭的难能可贵之处是真实.

Because the epitaph is unearthed, the tomb becomes a standard of the same kind of ones.

因有墓志, 故其墓葬形制和梅瓶样式为鉴定同类墓葬形制和梅瓶的标尺.

His epitaph for himself suited man as he wanted him to be.

他为自己撰写的墓志铭十分贴切,他正是希望自己成为这样的人.

These inscriptions can be divided into three categories : epitaphs, biographies and the others.

这些碑传文可分为碑志文 、 状文和其他三类.

In the way of writing, there all kinds of styles of epitaphs and his are grace.

在写作方式上, 曾巩所创作的墓志铭不拘一格,因事设体,平中见奇,文采斐然.

Reading the epitaphs, our only salvation lies in resurrecting the dead and burying the living.

念过许多墓志铭之后, 会想到我们(这个世界)的惟一获救之路就在于让死人统统复活而把活人统统埋葬.

There are three procedures in LED production, namely epitaxial wafer, tube core and encapsulation.

在LED生产过程中, 主要有外延片生长 、 芯片和封装三个环节.

Single wafer silicon epitaxial CVD equipment has very good thickness a nd resistivity uniformity.

使用单片式外延炉生产的硅外延材料具有良好的厚度和电阻率均匀性.

Homogeneous , strained epitaxial SiGe films on silicon substrates were used.

在硅基板上使用了均匀、应变的外延SiGe薄膜.

It is shown that the epitaxial layers have flat interface of heterojunctions and good crystal quality.

结果表明外延层具有平坦的异质结界面和良好的晶体特性.

And a brief description of the development of epitaxial The number of shape Combination.

并简单描述数形结合发展的外延.

Epitaxial layers of InSb and InAs _ xSb _ ( 1-x ) on ( 111 ) InSb and ( 100 ) GaAs substrate have been grown by MBE technique.

在 ( 111 ) InSb和 ( 100 ) GaAs衬底上,用分子束外延技术生长了InSb和InAs_xSb_ ( 1-x ) 外延层.