As the bonding agent of electrode used in aluminum industry.

The hardness distributing near bonding pad and strength of interface have been studied. The interface structure and bonding mechanism of electromagnetic hemicontinuous double pouring casting roll have been analyzed.

研究了结合界面附近的硬度分布和界面的结合强度，并分析了电磁半连续复合铸造轧辊的界面结构和结合机理。

This phenomenon indicates that the strength of the IMC layers which connect the BGA and bonding pad is increased by adding nanoparticles.

这说明了钎料与焊盘连接处的IMC的强度在添加纳米颗粒后得到了明显的提高。

This paper introduces how to recognize and locate the bonding pad from a silicon chip image with the method of Digital Image Processing and Pattern Recognition.

介绍了采用图像处理和模式识别的方法对一幅半导体芯片的图像进行焊盘的识别和定位。

In this article, bonding pad design, stencil design and assembly process of QFN device will be introduced in detail.

文章对QFN器件的焊盘设计，网板设计及组装工艺作了详细的介绍。

Layer thickness analysis results from a bonding pad on a circuit board, showing nanometer resolution thickness analysis.

来自电路板结合区的厚度分析，纳米尺度的厚度分析。

The influence of junction area and bonding pad size on the dark current has been also analyzed.

文中还对器件结面积和电极尺寸等对暗电流的影响进行了比较和分析。

New Type Roller Contour of Bonding Pad Roll for SSAW Pipe Unit

新型螺旋焊管机组焊垫辊辊型

It turns out that the antibonding orbital is a little bit higher from the atomic orbital level than the bonding orbital is lower.

这证明了，反键轨道，比原子轨道高，成键轨道比原子轨道第。

The valence bonding orbital rules in polyacids

多酸的价成键轨道规则

The Map Analysis of Bonding orbital Wave Function of Fe-Mo-S Cluster the Analogue of the Nitrogenase Fe-Mo-Cofactor

固氮酶Fe-Mo辅基模拟物Fe-Mo-S原子簇成键轨道的波函数图形分析

And what you find is when you have a bonding orbital, the energy decreases compared to the atomic orbitals.

你们发现当你有个成键轨道的时候，相比原子轨道能量要降低。

And so this lower level is called a bonding orbital, and it is a bonding molecular orbital.

所以能级较低的轨道叫做成键轨道，这就是成键分子轨道。

And this again is what we're going to call a bonding orbital.

同样，我们叫它成键轨道。

So, let's start our discussion of a bonding orbital.

让我们开始来讨论成键轨道。

Finally, the two activated surfaces are joined together in an EVG 501 wafer bonder by applying a modest and uniform contact force at low temperatures, ensuring hermetic sealing of the cavities and preventing destruction or distortion of small features.

最终结果是，在EVG501晶圆键合机上，两个活化的表面在低温下通过施加一个适中的、均匀的接触压力而连接在一起，保证了空腔密封并防止了小结构的破坏和变形。

Wafer bonder is divided into five subsystems: aeration system, vacuum system, high-voltage system, heating system, wafer transfer system. The five subsystems can provide the necessary external conditions for bonding.

晶圆键合机分为充气系统，真空系统，高压系统，加热系统，晶圆传送系统五个子系统，这五个子系统可为键合提供压力、环境、电压和温度等外部条件。

The basic principle of Wafer bonder is to require bonding material applied a series of external conditions, such as pressure, temperature, environment, voltage.

晶圆键合机的基本原理是对需要键合的材料施加一系列的外部条件，比如压力、温度、环境、电压，不同的外部条件可以用来进行不同材料和结构的键合。

Although manual gold wire bonder has been self-produced in our country, we realize automatic producing not yet, especially challenges still exist in the high speeding, high precision and stability.

虽然我国已能自行生产手动金丝球焊机，但尚未实现自动化，其中芯片定位和识别的实时性、高精度以及稳定性要求还面临着严峻挑战。

Fundamental Principles and Methods of Ultrasonic Control in Wire Bonder

键合机中超声波的基本控制原理及方法

Ultrasonic aluminum wire bonder and ultrasonic gold wire bonder are mainly applied to joint the chip pad with the lead-frame in the later process of semiconductor producing.

超声铝丝焊接机和超声金丝球焊接机主要运用于半导体生产后工序中芯片焊盘与外框架间引线的焊接。