SI的例句大全

Xingjiao Si and Xiangji Temple still exist as witness to the glory of Buddhism during the Tang era.

兴教寺和香积寺仍然见证着唐朝时期佛教的光辉兴盛。

It was found that the current and EL intensity synchronously swing with increasing Si layer thickness.

在一定的反向偏置下,电流和电致发光强度都随Si层厚度的增加而同步振荡,位相相同.

Research on Transformation of granular structure in low carbon Mn-Si steel

低碳Mn-Si钢中粒状组织转变研究

Study on a New Al-1% Si Bonding Wire for Encapsulation of Integrate Circuit

集成电路封装用新型Al-1%Si键合线的研制

Objective: Study regulation of Chinese drugs Si Junzi Tang to alteration of intestinal flora mouse.

目的: 研究中药四君子汤对肠道菌群失调小鼠的调节作用.

The ruined bridge si a relic of the Korean War in 1950.

这座毁弃的桥是1950年朝鲜战争的遗迹.

Si! I'll call a cab. It's very far.

我会叫计程车那很远

High k Gate Dielectric Materials and Si Nanotransistor ( Continued)

高k栅极电介质材料与Si纳米晶体管（续）

Nowadays, in the manufacturing of microelectronic components fluorocarbon plasma was widely used in low K a-C: F: H film deposition and the etching of SiO_2, Si and other related materials.

目前，碳氟等离子体被广泛用在器件的微细加工过程中，如沉积低介电常数的氟化非晶碳薄膜，刻蚀SiO2、Si以及其它相关材料。

But Al accelerates the growth of � �-Si 3 N 4 to a certain extent.

但Al对β-Si_ 3N_4生成有一定的促进作用.

Such words, Gibson and Si Biya gram achievement substitution.

这样的话, 吉布森和斯则比亚克作为替补.

Results show that SiN films with a low hydrogen content can be prepared by HWP CVD at a higher rate and lower substrate temperature, and the main bond mode in the deposited SiN films is Si& N stretching mode.

结果表明，采用HWP CVD技术能在低衬底温度条件下以较高的沉积速率制备低H含量的SiN薄膜，所沉积的薄膜主要表现为Si&N键合结构。

Enlightenment and Compassion& An interpretation on relationship between I and Impoverished person in Wu-Si literature

启蒙与同情&五四文学中我与贫弱者关系的一种透视

Progress in the Thh Film of nc-Si: H snd Its Application in Quantum Functional Devices

纳米硅薄膜的最新进展及其在量子功能器件中的应用前景

In early aging stage, the strength and hardness increased with increment of wMg/ wSi and wMg/ wCu values for Si-excess alloys.

结果表明：在时效初期，对于硅过剩合金，其硬度和强度随wMg/wSi和wMg/wCu值增大而提高；

Development of an Electrical Control VVT System for High Speed SI Engines

车用高速汽油机电控可变配气相位系统

This Vth model is derived by the second-derivative method and is based on the ON-state drain current model of poly-Si TFTs.

该阈值电压模型是在多晶硅TFT开态电流模型的基础上，利用二次微分法推导得到的。

The ultrastructure and synaptic relationship of projection fiber terminals from area SI to VPL in the cat

皮质丘脑纤维终末的超微结构及突触联系

Total liquid encapsulated vertical gradient freeze ( VGF) method has been used to grow undoped semi-insulating ( SI) GaAs crystals. The impurities such as silicon and carbon have been well controlled in the growth process.

研究了非掺GaAs半绝缘单晶的液封垂直梯度凝固法（VGF）生长技术，解决了Si沾污和C浓度的控制问题，得到了直径2英寸非掺半绝缘低位错单晶。

According to the mechanism and the math model of the clock feed through of the basic SI cell, this paper presents a new clock-feed through compensation scheme that needs a simple circuit architecture and simple clock system.

本文依据基本的开关电流单元电路中时钟馈通误差的产生机理和数学模型，提出了一种时钟馈通的主体误差抵消方案，该方案在实现时结构简单，无需复杂时钟系统的参与。